Abstract
Tungsten silicide was synthesized by multipulse XeCl laser irradiation of co-sputtered WSi mixtures 140 and 460 nm thick on single-crystal silicon wafers. It is shown that at certain equilibria between contradictory influences of the depth of melting, stress generation, intermixing and crystallization it is possible to grow good quality tungsten silicide. Silicide layers with only one crystalline phase (WSi 2) and with a resistivity of 170 μω cm were obtained after irradiation of a WSi film 140 nm thick with 10 laser pulses at a fluence of 0.9 J cm −2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
