Synthesis of SiO 2 thin films by reactive excimer laser ablation

Abstract

Silicon oxide films are deposited by laser ablation from silicon, silicon monoxide and fused silica targets, performed under vacuum and in oxygen atmosphere, with a high power pulsed ArF (λ = 193 nm) excimer laser. The specific influence of oxygen in the chamber during the laser processing on the synthesis of stoichiometric SiO 2 films is demonstrated.