Abstract
Silicon dioxide thin films are deposited, for the first time, by reactive laser ablation from a silicon monoxide target, in oxygen atmosphere, with a high power pulsed excimer laser working at 193 nm (ArF) or 248 nm (KrF) wavelength. The specific influence of oxygen in the chamber during the laser processing on the stoichiometry and final properties of the oxide films deposited at ambient temperature are analyzed.
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