Abstract
Porphyrins may serve as the active charge-storage medium in memory chips. A series of 14 porphyrins (trans-A2B2, trans-AB2C, or A4 type; free base, copper or zinc chelate) has been synthesized for investigation of metal deposition on porphyrin monolayers. Each trans-AB2C porphyrin is equipped with a surface attachment group and a distal functional group (or flanking functional groups). The surface attachment groups include S-acetylthiomethyl, hydroxymethyl, TMS-ethynyl, allyl, and triallylmethyl; the functional groups include amino, cyano, dipyrrin-5-yl, formyl, and nitro; all of which are attached to the p-position of a porphyrin meso-phenyl group. Two non-redox-active triallylmethyl-substituted arenes were also prepared for use as control compounds.
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