Synthesis of multilayer polycrystalline diamond films using bias-induced secondary nucleation

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We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50μm. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications.