Extreme insulating ultrathin diamond films for SOD applications: From coalescence modelling to synthesis

Abstract

The synthesis of diamond films with extreme insulating properties is of great interest for most diamond film applications in nanoelectronics. SOD (Silicon-On-Diamond) is a promising alternative to standard SOI (Silicon-On-Insulator) because of the high heat-spreading capability of diamond material. Current Fully Depleted MOS processing technologies require a thickness of the dielectric buried layer of 150 nm. Synthesis of polycrystalline diamond films is already well documented. Nonetheless, the difficulties here are to keep their high thermal conductivity and their high electrical resistivity in spite of the reduction of the diamond layer thickness. This study aims at the fine control of both the nucleation density and the growth process to enable the fabrication of optimized fully covered diamond films as thin as possible. A mathematical model describing the coalescence was used to determine the surface coverage of the diamond film according to the linear growth of the diamond nanocrystals for different nucleation densities. The model gives information on the nucleation density needed to obtain a covering diamond film within ultrathin diamond layer thickness. To corroborate the coalescence model, diamond layers with different surface coverages were characterized. Our work led to ultrathin diamond layers (thickness below 140 nm) exhibiting electrical resistivities above 2 × 10 13 Ω cm.