Abstract
MoS2 and WS2 as typical two-dimensional transition metal dichalcogenides have been investigated since of rich physicochemical properties. To deposit MoS2 and WS2 thin films, chemical solution deposition as a facile route had been used showing the advantages of high component controllability, low cost, sequential processing of device, easy preparation of large-size films and facile preparation of films on irregular substrates. Here, Mo1-xWxS2 (0 ≤ x ≤ 1) thin films were successfully prepared by chemical solution deposition method. The phases as well as microstructures were investigated using field emission scanning electron microscope, atomic force microscopy, transmission electron microscopy, Raman and x-ray photoelectron spectroscopy measurements. The prepared Mo1-xWxS2 thin films are used as hydrogen evolution reaction (HER) catalyst electrodes for water splitting. The Mo0·3W0·7S2 thin film catalyst shows an overpotential of 345 mV at a current density of 10 mA cm−2 and the corresponding Tafel slope of 169 mV dec−1 in 0.5 M sulfuric acid. The results will provide a facile method to deposit MX2 thin films.
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