Abstract
In this paper, we demonstrate the practicality and feasibility of the flash light-sintering method to fabricate the ceramic material perovskite structure for lanthanum nickel oxide (LaNiO3; LNO) thin films using flash light irradiation equipment. LNO thin films are deposited on an Si wafer and Al2O3 substrate via the chemical solution deposition (CSD) method and sintered by a thermal and flash light-irradiation process with a bottom heater. The properties of flash light-sintered LNO thin films are compared with those of thermally sintered films. The surface morphology, crystal development, and electric conductivity of the LNO thin films are measured by field-emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), and a four-point probe, respectively. Flash light sintering was accomplished in milliseconds. Through the comparison of thermal sintering and flash light-sintering results, it was confirmed that perovskite LNO thin films deposited by the CSD method can be fabricated by flash light sintering. We show that the flash light sintering method can solve several inherent issues of the conventional thermal sintering method.
Highlights
The ABO3 perovskite structured ceramic materials have been studied as functional materials in various energy conversion and storage devices, including solid oxide fuel cells, ferroelectric capacitors, and piezoelectric power generators
We demonstrated a novel flash light sintering method for chemical solution-deposited
lanthanum nickel oxide (LNO) thin films compared with thermally sintered LNO thin films characterized by field-emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), and four-point probe
Summary
The ABO3 perovskite structured ceramic materials have been studied as functional materials in various energy conversion and storage devices, including solid oxide fuel cells, ferroelectric capacitors, and piezoelectric power generators. The deposited amorphous films should traditionally be exposed at high temperature (~700 ◦ C) to develop crystallinity by the nucleation and growth process to obtain the desired material properties such as electrical conductivity and electrochemical activity These conventional sintering methods require a long process time to increase the temperature and cooling without breakage of the sintered films. The electrical properties of the films were observed by measuring and comparing the resistivity of the films with those fabricated by the conventional thermal sintering method We believe that these results provide implications to lower the fabrication time and cost as well as facilitate the commercialization of devices that require thin perovskite ceramic films
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