Abstract
Thin films of graphene oxide (or reduced graphene oxide) recently drawn a huge attention because of their several applications which are based on properties of graphene. The aim of the present paper is twofold: to find the straightforward, simple and cheap method for the preparation of thin film of graphene oxide and to study the effect of electron beam irradiation on the GO thin film. GO film was made by drop casting method from commercially procured aqueous solution of GO (concentration - 5 g/L). Electron beam irradiation were done in SEM obtain from MIRA II LMH from TESCAN. Irradiation of GO film was done at 25 keV electron beam energy. The authors have measured I-V characteristic of pristine as well as irradiated GO thin film in two probe configuration. Irradiation time were chosen 1 min, 33 min and 100 min which corresponds to 3×1011 e-/cm2, 1×1013 e-/cm2 and 3×1013 e-/cm2 fluence of electron beam. The samples were characterized using SEM and Raman methods. I-V spectra show that the resistance of fil...
Published Version
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