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Abstract
Present investigation deals with the effect of electron beam irradiation on the photoelectrochemical properties of cadmium selenium telluride (CdSe0.6Te0.4) thin films. Initially, CdSe0.6Te0.4 thin films were electrodeposited on fluorine doped tin oxide (FTO) coated glass and stainless steel substrates. Later, these CdSe0.6Te0.4 thin films were irradiated with high energy electron beam (10 MeV) of different doses from 10 to 30 kilograys (kGy). The effect of electron beam irradiation on different physico-chemical properties of CdSe0.6Te0.4 thin films such as morphological, structural, optical and photoelectrochemical has been investigated. It is observed that, the electron beam irradiation treatment considerably affects the properties of CdSe0.6Te0.4 thin films. The surface morphology of CdSe0.6Te0.4 thin films was changed from cauliflowers to nanoflowers, nanoroses and interconnected nanoflakes with doses of electron beams. Furthermore, the effect of electron beam irradiation on photoelectrochemical properties of CdSe0.6Te0.4 films was investigated. It is interesting to note that, the photoelectrochemical (PEC) properties of CdSe0.6Te0.4 thin films are extensively affected by electron beam irradiation. The photoconversion efficiency values of CdSe0.6Te0.4 films for different doses of electron beam are found to be 0.9%, 1.1%, 2.0% and 1.5%, respectively.
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