Synthesis of beta-gallium oxide nanobelts through microwave plasma chemical vapor deposition

Abstract

Beta-gallium oxide (β-Ga 2O 3) nanobelts were synthesized through microwave plasma chemical vapor deposition (MPCVD) of liquid-phase gallium containing H 2O in Ar atmosphere using silicon as the substrate. Unlike the common microwave plasma method, the H 2O, not mixture of the gas, was employed to synthesize the nanostructures. β-Ga 2O 3 nanobelts prepared by MPCVD have not been reported. The thickness of β-Ga 2O 3 nonobelts was 20–30 nm and length of them was tens to hundreds of microns. The morphology and structure of the products were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and X-ray diffraction (XRD). Possible growth mechanisms of the β-Ga 2O 3 nanobelts are briefly discussed.