Abstract
In this study, beta-gallium oxide (ฮฒ-Ga 2O 3) nanowires, nanobelts, nanosheets, and nanograsses were synthesized through microwave plasma of liquid phase gallium containing H 2O in Ar atmosphere using silicon as the substrate. The nanowires with diameters of about 20โ30 nm were several tens of microns long and the nanobelts with thickness of about 20โ30 nm were tens to hundreds of microns long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These results showed that multiple nucleation and growth of ฮฒ-Ga 2O 3 nanostructures could easily occur directly out of liquid gallium exposed to appropriate H 2O and Ar in the gas phase. The growth process of ฮฒ-Ga 2O 3 nanostructures may be dominated by VS (vaporโsolid) mechanism.
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