Abstract

In this study, beta-gallium oxide (ฮฒ-Ga 2O 3) nanowires, nanobelts, nanosheets, and nanograsses were synthesized through microwave plasma of liquid phase gallium containing H 2O in Ar atmosphere using silicon as the substrate. The nanowires with diameters of about 20โ€“30 nm were several tens of microns long and the nanobelts with thickness of about 20โ€“30 nm were tens to hundreds of microns long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These results showed that multiple nucleation and growth of ฮฒ-Ga 2O 3 nanostructures could easily occur directly out of liquid gallium exposed to appropriate H 2O and Ar in the gas phase. The growth process of ฮฒ-Ga 2O 3 nanostructures may be dominated by VS (vaporโ€“solid) mechanism.

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