Synthesis of β-Ga 2O 3 nanowires through microwave plasma chemical vapor deposition

Abstract

In this study, we demonstrate the large-scale synthesis of beta gallium oxide (β-Ga 2O 3) nanowires through microwave plasma chemical vapor deposition (MPCVD) of a Ga droplet in the H 2O and Ar atmosphere at 600 W. Unlike the commonly used MPCVD method, the H 2O, not mixture of gas, was employed to synthesize the nanowires. The ultra-long β-Ga 2O 3 nanowires with diameters of about 20–30 nm were several tens of micrometers long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The growth of β-Ga 2O 3 nanowires was controlled by vapor–solid (VS) crystal growth mechanism.