Abstract
We have studied the structure of transverse cross sections of a heterocomposition consisting of porous layers of silicon carbide polytypes (substrate 6H-SiC/por-6H-SiC/epi-3C-SiC/por-3C-SiC). The epitaxial layer of 3C-SiC polytype (epi-3C-SiC) was grown by sublimation in vacuum on the surface of a porous 6H-SiC sublayer (por-6H-SiC) obtained by electrochemical etching of a 6H-SiC substrate. The boundary between the 3C-SiC epilayer and the porous 6H-SiC sublayer contains no defective transition layer, and the 3C-SiC epilayer is free of dislocations.
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