Synthesis and properties of tantalum oxide films prepared by the sol-gel method using photo-irradiation

Abstract

Recently, interest in the sol-gel method has been increasing, especially in preparing dielectric thin films with high dielectric constant. Tantalum oxide (Ta 2O 5) films are good candidates for insulators in LSI devices, electroluminescent devices and film capacitors because of their large dielectric constant. In the present paper, the preparation method and properties of Ta 2O 5 films, fabricated by a new process consisting of sol-gel process together with the photo-irradiation process, is reported. In this method, it became possible to fabricate Ta 2O 5 films at low temperature. Electric characteristics of these Ta 2O 5 films were almost the same as those Ta 2O 5 films prepared by sputtering and chemical vapor deposition.