Abstract
The effect of substrate material on the electrical characteristics of Ta x O y films produced by high-frequency magnetron sputtering of a tantalum oxide target is studied. The effect of oxygen plasma on leakage currents, dielectric permittivity, and dielectric dissipation factor of thin (300–400 nm) Ta x O y layers is found. It is proposed to process tantalum oxide films in oxygen plasma to control their electrical and dielectric properties.
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