Synthesis and optoelectronic properties of p-type nitrogen doped ZnSe nanobelts

Abstract

Single-crystal nitrogen (N) doped p-type ZnSe nanobelts (NBs) with zinc blende structure were synthesized in ammonia atmosphere via a thermal evaporation method. The p-type conductivity of ZnSe:N NBs was confirmed by field-effect transistors (FETs) based on individual NBs. High-performance photodetectors were constructed based on ZnSe:N NBs, which show high sensitivity and relatively fast response speed to the incident light with a sharp cut-off at 460nm, corresponding to the band-gap of ZnSe. The high photosensitivity and relatively fast response speed are attributable to the high crystal quality of the ZnTe nanowires. These results reveal that such single-crystalline ZnSe NBs are excellent candidates for optoelectronic applications.