Abstract

Sn doped ZnO nanobelts (NBs) have been synthesized by using thermal evaporation method. Sn powder was mixed with the ZnO and graphite powder as the growth reactant for obtaining Sn doped ZnO NBs. It was prepared under nitrogen ambient at temperature 1000° C. The NBs formed were examined with X‐ray diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM). Current‐Voltage (I–V) curve of grown NBs and p‐n junction was measured in a dark environment with forward and reverse biases. Optical property of the NBs was characterized by UV‐Visible spectrometer.

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