Abstract
Highly pure and crystalline CdSxSe1 -x nanostructures have been successfully synthesized via Chemical Vapor Deposition (CVD) method, changing the components of x, in order to adjust the band gap of materials, and the relationship with the lattice constant. Using X-ray Diffraction (XRD) to characterize the phase structures and elemental compositions of the samples, and using Field Emission Scanning Electron Microscopy (FESEM) to observe the surface morphology of CdSxSe1 -x nanomaterials and confirm the VLS growth mechanism. Using the High Resolution Transmission Electron Microscopy (HRTEM) and Selected Area Electron Diffraction (SAED) to analyze the crystal structure and the growth direction of the materials
Highlights
Due to the unique optical and electrical properties as well as the potential applications in microelectronic devices, the semiconductor nanostructures have attracted great attention of the scientific researchers
Based on the above analysis, CdSxSe1-x semiconductor nanomaterials in the preparation process, by adjusting the reaction source material Cadmium Sulfide (CdS) and Cadmium Selenium (CdSe) ratio, while studying the best reaction parameters prepared high crystalline quality of CdSxSe1-x nano-materials, as well as the material ban the variation of the tape width with the source material composition is of great significance
With the introduction of the growth method, which is the chemical vapor deposition method adopted in this experiment, this work makes a detail illustration on the experimental procedure and the three major parts in the experimental system
Summary
Due to the unique optical and electrical properties as well as the potential applications in microelectronic devices , the semiconductor nanostructures have attracted great attention of the scientific researchers. The solid solution CdSxSe1 -x semiconductor nanostructure has many similar properties with its original binary compound CdS and CdSe. The flexibility of the CdSxSe1 -x semiconductor nanostructure’s band gap will greatly enhance the ternary compound application value for optoelectronic devices [1,2]. The two solid solutions and the original binary compounds will have many very similar properties, its important performance parameters, for example such as lattice constant, forbidden band width, optical properties, luminescent color and so on will change continuously with the composition changes, Its bandwidth flexibility will greatly enhance the value of this ternary compound in optoelectronic devices. Twophoton excitation here refers to the excitation of photons less than the forbidden band width of the excited material; it can achieve the transition by absorbing two photons simultaneously
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