Abstract
The straight and curved gallium nitride (GaN) nanowires were successfully synthesized by controlling the gallium/nitrogen reactant ratio via a chemical vapour deposition method. The structure and morphology of nanowires were characterized by X-ray diffraction (XRD), transmission electronic microscopy (TEM), field emission scanning electron microscopy (FESEM), selected area electron diffraction (SAED) and high resolution transmission electron microscopy (HRTEM). The straight and curved GaN nanowires are composed of wurtzite and a zinc blende structure, respectively. Photoluminescence (PL) spectra of zinc blende GaN nanowires showed a strong UV emission band at 400 nm, indicating potential application in optoelectronic devices.
Highlights
A one-dimensional (1D) nanostructure composed of gallium nitride (GaN) has attracted tremendous attention due to its unique optoelectronic properties, high mobility and excellent thermal stability [1,2] in the synthesis of semiconductor devices, typically as field effect transistors, light-emitting diodes, logic circuits, UV photodetectors and nanolasers [3,4,5,6,7]
Various 1D nanostructures of GaN have been successfully synthesized via different routes by using catalyst mediation techniques, such as chemical vapour deposition (CVD) [8], template direct methods, which use carbon nanotubes [9] and porous alumina as scaffolds [10], or catalyst-free techniques, including laser ablation [11], molecular beam epitaxy (MBE) [12], metalorganic chemical vapour deposition (MOCVD) [13] and hydride vapour phase epitaxy (HVPE) [14]
Recent years have seen a growing interest in the synthesis of GaN nanowires with different sizes and morphologies, such as nanowires [15], nanowire arrays [16], zigzagshaped nanowires [17], leaf-shaped nanowires [18,19] and etched GaN nanowires [20]. Most of these studies are focused on common hexagonal wurtzite GaN nanostruc‐ tures because they are stable under thermodynamics
Summary
A one-dimensional (1D) nanostructure composed of GaN has attracted tremendous attention due to its unique optoelectronic properties, high mobility and excellent thermal stability [1,2] in the synthesis of semiconductor devices, typically as field effect transistors, light-emitting diodes, logic circuits, UV photodetectors and nanolasers [3,4,5,6,7]. Recent years have seen a growing interest in the synthesis of GaN nanowires with different sizes and morphologies, such as nanowires [15], nanowire arrays [16], zigzagshaped nanowires [17], leaf-shaped nanowires [18,19] and etched GaN nanowires [20]. Most of these studies are focused on common hexagonal wurtzite GaN nanostruc‐ tures because they are stable under thermodynamics. The pure cubic GaN nanowires were prepared for the first time
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