Abstract
High quality InAs nanocrystals were synthesized using in situ generated AsH3 as arsenic precursor. The growth process was studied by monitoring the absorption spectra. An injection of additional solvent was adopted to control the nucleation. The growth of InAs nanocrystals should be controlled in 20–30 min, an extension of growth would lead to dissolution of the nanocrystals due to the instability of the monomers formed from AsH3. Addition of zinc stearate along with an indium source improved the photoluminescence without leading to doping of InAs nanocrystals.
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