Abstract
We have tried the growth of InAs dots on Si surfaces terminated with hydrogen atoms. It has been confirmed with cross-section transmission electron microscopy (XTEM) and field emission scanning electron microscopy (FESEM) that high quality InAs nanocrystals can be grown with a high density on Si (100) surfaces terminated with hydrogen atoms. The growth of InAs nanocrystals is initiated with formation of In islands followed by diffusion of As atoms into the In dots. The band discontinuity of the InAs/Si interface has been evaluated using the results of synchrotron radiation photoelectron spectroscopy (SRPES). The offsets for valence band and conduction band are estimated to be 0.31 eV and 0.44 eV, respectively. This result indicates that both holes and electrons can be well confined into InAs nanocrystals.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
