Abstract
The antimony doped indium selenide (Sb0.05In0.95)Se crystals have been grown using the direct vapour transport (DVT) technique. The grown (Sb0.05In0.95)Se crystals have been characterized by estimating its structural, optical and electrical properties using appropriate techniques. The (Sb0.05In0.95)Se crystal has a hexagonal crystal structure with a preferred orientation along the (004) direction from the X-ray diffraction (XRD) spectra. Also, the micro-structural parameters (crystallite size, lattice strain, dislocation density, domain population) have been analysed from XRD spectra. The optical parameters (optical band gap, extinction coefficient and refractive index) have been calculated from UV–vis absorption spectrum. The resulting optical direct band gap is 1.51 eV. The activation energy value of 0.71 eV has been obtained from resistance-temperature observations of (Sb0.05In0.95)Se crystal.
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