Abstract
SiH n on Si (100) surfaces during synchrotron radiation (SR) stimulated gas source molecular beam epitaxy (SR-GSMBE) using Si2H6 gas (1.0×10-3 Torr) are investigated in situ by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates (BML-IRAS) in the low substrate temperature region (400° C-140° C). It has been found that SiH2 and SiH3 on the surface are easily decomposed by SR to SiH and the decomposition rate of SiH is extremely slow. The decomposition reaction cross sections for SiH2 and SiH3 for the total irradiating photon flux have been evaluated to be 5.7×10-20 cm2 and 1.7×10-19 cm2, respectively. Experimental results are discussed, considering the model of the localized multihole excitation and its quenching.
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