Abstract
An explicit charge-based unified compact drain current model for lightly doped or undoped DG MOSFETs is proposed. It takes into account the short-channel effects, the subthreshold slope degradation, the drain-induced barrier lowering and the channel length modulation effects. The model is valid and continuous in all regimes of operation and it has been validated by developing a Verilog-A code and comparing the model results of transfer and output characteristics with simulation results exhibiting an average error of about 3%. The efficient solution of the Lambert W function for the inversion charge and the symmetry of the model make it suitable for circuit simulation and allow fast and accurate simulations of the transistor characteristics.
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