Abstract
An analytical compact drain current model for undoped (or lightly doped) short-channel triple-gate (TG) FinFETs is presented, taking into account quantum mechanical and short-channel effects such as threshold voltage shift, drain-induced barrier lowering and subthreshold slope degradation. In the saturation region, the effects of series resistance, surface-roughness scattering, channel-length modulation and saturation velocity were also considered. The proposed model has been validated by comparing the transfer and output characteristics with device simulations for channel lengths down to 20 nm.
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