Symmetric rate model for fluorocarbon plasma etching of SiO2

Abstract

A symmetric rate model for plasma etching and plasma deposition in fluorocarbon plasmas is proposed. When there is no deposition, the symmetric rate model gives a plasma etch rate. When there is no etching, the model gives a plasma deposition rate. Electron cyclotron resonance and reactive ion etcher etch rates of SiO2 in CF4 plasma are found to be consistent with the model.