Abstract
La0.5Sr0.5CoO3/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3 (LSCO/NBT/LSCO) ferroelectric capacitors have been successfully fabricated on (001) SrTiO3 substrate, in which the LSCO film is prepared by magnetron sputtering and the NBT film by pulsed laser deposition.
Highlights
IntroductionFerroelectric thin lm materials have been extensively investigated due to their good ferroelectric, dielectric, piezoelectric and optical properties for various kinds of applications, e.g. phase shi ers, microelectromechanical systems, sensors, and ferroelectric random access memory (FeRAM).[1,2,3] Lead based Pb(Zr1ÀxTix)O3 (PZT) lms are intensively studied worldwide including by our group due to their large remnant polarization and small coercive voltage.[4,5,6] PZT lms are not environmentally friendly materials, many efforts have been made to develop lead-free new type ferroelectric materials.[7,8] Sodium bismuth titanate, Na0.5Bi0.5TiO3 (NBT), with A-site composite perovskite structure is considered as an excellent candidate to replace lead based ferroelectric materials.[9,10] Recently, we have successfully prepared a single-phase high quality NBT bulk material by solid state reaction method, and investigated the optical properties and ferroelectric properties.[11,12] The Na0.5Bi0.5TiO3 ceramics have good ferroelectric properties at room temperature and relatively high Curie temperature (320 C), which makes ferroelectric NBT lm based device very promising.[13]
(111) oriented NBT lm was prepared on Pt/Ti/SiO2/Si substrate by a sol–gel process, it is found that the remnant polarization and coercive eld are 20.6 mC cmÀ2 and 112 kV cmÀ1, respectively.[16] (001) and (011) oriented epitaxial NBT lms have been successfully fabricated on platinum coated MgO and SrTiO3 substrates by pulsed laser deposition, and very good dielectric and ferroelectric properties have been reported.[17,18]
We report on the fabrication of the epitaxial LSCO/NBT/LSCO/SrTiO3 (STO) heterostructure, and the structural and switching properties of the LSCO/NBT/LSCO ferroelectric capacitors have been systematically investigated
Summary
Ferroelectric thin lm materials have been extensively investigated due to their good ferroelectric, dielectric, piezoelectric and optical properties for various kinds of applications, e.g. phase shi ers, microelectromechanical systems, sensors, and ferroelectric random access memory (FeRAM).[1,2,3] Lead based Pb(Zr1ÀxTix)O3 (PZT) lms are intensively studied worldwide including by our group due to their large remnant polarization and small coercive voltage.[4,5,6] PZT lms are not environmentally friendly materials, many efforts have been made to develop lead-free new type ferroelectric materials.[7,8] Sodium bismuth titanate, Na0.5Bi0.5TiO3 (NBT), with A-site composite perovskite structure is considered as an excellent candidate to replace lead based ferroelectric materials.[9,10] Recently, we have successfully prepared a single-phase high quality NBT bulk material by solid state reaction method, and investigated the optical properties and ferroelectric properties.[11,12] The Na0.5Bi0.5TiO3 ceramics have good ferroelectric properties at room temperature and relatively high Curie temperature (320 C), which makes ferroelectric NBT lm based device very promising.[13]. (111) oriented NBT lm was prepared on Pt/Ti/SiO2/Si substrate by a sol–gel process, it is found that the remnant polarization and coercive eld are 20.6 mC cmÀ2 and 112 kV cmÀ1, respectively.[16] (001) and (011) oriented epitaxial NBT lms have been successfully fabricated on platinum coated MgO and SrTiO3 substrates by pulsed laser deposition, and very good dielectric and ferroelectric properties have been reported.[17,18] Compared to Pt electrode, the cheaper LSCO electrode can provide oxide/oxide (LSCO/NBT) interface, different from the metal/oxide (Pt/NBT) interface, which may further impact the NBT physical properties. E-mail: btliu@ hbu.cn bCollege of Science, Agriculture University of Hebei, Baoding 071001, China cCollege of Science, Ningbo University, Ningbo 315211, China
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