Switching Loss Calculation of Power MOSFET using the Estimation Technique

Abstract

An accurate analytical model is very important to measure the switching losses of Power MOSFET. The perfect estimation of Power MOSFET switching loss is very difficult to predict the efficiency of the power electronics circuit. This paper investigates the basic internal physics of the Power MOSFET device and proposed the best possible analytical model to calculate the power loss. The pre-existing widely accepted power loss calculation method is found to be useless and inaccurate. In addition, the result of the pre-existing method is overestimated to apply approximating switching time. This paper focused on new charge parameters specification and switching time estimation technique to measure less erroneous switching losses of Power MOSFET. Keywords: DESSIS, Estimation technique, Power MOSFET, Switching loss, Sabre RD