Abstract
Applicability of a power MOSFET in power conversion applications is determined by peak junction temperature during operation. Power losses and thermal characteristics are required to estimate the junction temperature. In this paper, switching loss of high voltage power MOSFET in hard switching application such as boost power factor correction pre-regulator is discussed. A new simple analytical switching loss model based on electrical parameters listed in the device datasheet is proposed. This method allows easy comparison of switching performance between devices from different technologies. Switching losses estimated with the proposed model are compared to measurements done in clamped inductive switching test board to demonstrate the accuracy of the proposed model.
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