Switching effect and the metal–insulator transition in electric field

Abstract

We measured S-shaped I–V characteristics of vanadium dioxide in a wide temperature range (15–340 K). The proposed switching mechanism in materials with metal–insulator transition (MIT) is based on an electronically induced MIT occurring in conditions of the non-equilibrium carrier density excess under the applied electric field. The mechanism is developed on the basis of a phenomenological approach, and this model not only allows the qualitative description of the switching mechanism, but it is in quantitative agreement with the experimental results, in particular, with those concerning the critical concentration and threshold field temperature dependence. The model takes into account the dependence of the carrier density on the electric field strength. The experimental results for vanadium dioxide are examined within the frameworks of the developed approach. Finally, the validity of the proposed model for other systems is discussed.