Abstract
Epitaxial thin films of La0.7Ba0.3MnO3 manganite, deposited using chemical solution deposition technique, were irradiated by 200MeV Ag+15 ions with a maximum ion dose up to 1×1012ions∕cm2. Temperature and magnetic-field-dependent resistivity measurements on all the films (before and after irradiation) reveal a sustained decrease in resistivity with increasing ion dose. A maximum dose of 1×1012ions∕cm2 suppresses resistivity by factors of 3 and 10 at 330K [insulator-metal (I-M) transition] and at 10K, respectively. On the other hand, with increasing ion dose, the magnetoresistance enhances in the vicinity of I-M transition but decreases at low temperatures. These results, corroborated by surface morphology of films, suggest that the origin of such properties lies in the irradiation induced improved crystallinity and epitaxial orientation, enhanced connectivity between grains and conglomeration of grains, which result in better conductivity at grain boundaries.
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