Abstract
A novel integrated passive devices fabrication technique which combines wafer level packaging and bulk Si etching technologies to prepare silicon based suspended inductors with high quality factor (Q) is presented. Inductors based on copper/benzocyclobutene and copper/polyimide structures are fabricated with two-step back-etching technology on low resistive silicon wafer. The characteristics of 3-turn spiral inductors are investigated. The measured Q of 6.8 nH suspended inductors are 29.3 at 2.4 GHz and 20.6 at 5 GHz while the Q of the others without suspended are 11.0 at 2.4 GHz and 4.4 at 5 GHz, respectively. This technique can significantly improve the performance in high frequency range and has a wide application in hand-held RF module.
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