Abstract
An expression for surface potential for Poly-Silicon Thin Film Transistors (Poly-Si TFT) is derived. The surface potential thus calculated numerically as a function of terminal voltage is used in the proposed dc charge sheet model for Poly-Si TFT to determine the drain current as a of function terminal voltage in the linear and saturation regions using single expression. The model is verified using available experimental data for output and transfer characteristics for different Poly-Si TFTs and shows good agreement with the experimental data. However, the proposed model does not consider the kink effect which is dominant at higher drain to source voltage.
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