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Abstract
The polycrystalline diamond films in this research were deposited on silicon substrates using a methane/hydrogen gas mixture by a microwave plasma chemical vapor deposition (MPCVD) system. Gold (Au), silver (Ag) and indium (In) metals with work functions of 5.1 eV, 4.3 eV and 4.1 eV were evaporated onto high quality (large-grain) and poor quality (small-grain) diamond films for surface-enhanced Raman scattering (SERS) analysis. It was found that the broad shoulder of the non-diamond signal was separated into three characteristic peaks centered at 1368 cm −1, 1580 cm −1 and 1646 cm −1 for both high quality and poor quality diamond films. The characteristic diamond peak also shifted to lower wave number due to tensile stress. Especially, for the poor quality diamond film, the signal of the characteristic diamond peak was enhanced and became more noticeable. Experimental results showed that the In contact with the smaller work function exhibited stronger SERS than Au and Ag contacts.
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