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Abstract
High-quality homoepitaxial diamond films without any growth hillocks and abnormal particles have been successfully deposited at a reasonably high deposition speed of ∼0.5 µm/h by a 5 kW microwave plasma chemical vapor deposition system. These films show cathodoluminescence (CL) spectra predominated by strong free-exciton recombination radiation assisted by a transverse optical phonon and its replicas even at room temperature. The temperature dependence of the CL feature has been analyzed quantitatively. The results suggest that a considerable reduction of non-radiative relaxation paths is accomplished in the present case of high-quality diamond films.
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