Surface-acoustics phonon scattering in 2D-hole gas of diamond based FET devices

Abstract

We report on the effects of surface-acoustic phonon scattering on the charge transport behavior of diamond based FET devices. Motivated by the promising role of diamond in the realization of high power and high frequency electronic devices, the present work is focused on detailed formulation of relaxation times due to the hole-surface-acoustic phonon scattering, which appears to have been an overlooked scattering mechanism important to diamond-based devices. The matrix element, scattering rates and relaxation times have been calculated by taking into account, for the first time Rayleigh waves near the surface. This is achieved by quantizing the Rayleigh waves and using the corresponding acoustic phonon to calculate the Fermi golden rule based scattering rate of holes in the two-dimensional hole gas. The results show that the scattering of holes with surface acoustic Rayleigh waves reduced relative to scattering from bulk 3D acoustic phonons. Moreover, the mobilities are found to be higher than those based on the theory for 3D acoustic phonons. The results reveal significant insights to diamond based electronics having acoustic phonons Rayleigh waves thus opening new research endeavors.