Abstract
We have used Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (ELS) to study the effect of argon ion bombardment on the structural and electronic properties on InP(110) surfaces, and the effect of different surface treatments on InP(100) wafers. Even at a low dose (1.5×10 15 cm -2) and low energy (250 eV) argon ion bombardment on oxidized InP(110), P is preferentially sputtered away, leaving the surface with In islands, as indicated by the appearence of In surface and bulk plasmon peaks in the ELS spectra. ELS also reveals the presence of excess elemental In on InP(100) wafers etched in HCl.
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