The InSb(100) surface change during the argon ion bombardment and the electron stimulated oxidation

Abstract

Auger Electron Spectroscopy (AES) and Electron Energy Loss spectroscopy (EELS) have been used to study the cleaning of InSb(100) by argon ion bombardment. Ion beam etching of the InSb(100) surface is performed at low energy (500 eV), normal incidence and with a2 μA cm −2 current density. EELS spectra are recorded at the primary energy ( E p = 250 eV), for different incidence angles, defined between the incident electron beam direction and the surface. Thus, the InSb(100) surface change is monitored by the EELS technique, which indicates that argon ion bombardment forms small In islands on the top layers of the material. EELS, associated with AES, reveals the electron stimulated oxidation on the InSb(100) surface in vacuum under a partial pressure of oxygen at about 10 −8 Pa. The oxide is thought to be an indium oxide.