Abstract
The surface roughness and etching properties for polycrystalline Cu irradiated by helium and argon ions were examined. In order to obtain a smooth surface and large etching rate, effects of incident angle and fluence of ion were studied. When the incident angle was 0°, i.e., perpendicular to the surface, the protuberance with a size of crystal grain was observed both for the cases of He + and Ar + ion irradiations. For He + ion irradiation, the oblique incidence up to 45° made a smooth surface compared with the case of 0°. When the incident angle was large, 67.5°, the etching rate became quite large, however, the surface roughness was observed to be large. For Ar + ion irradiation, very smooth surface with large etching amount was observed by the oblique incidence. These results show that very smooth etching surface can be obtained by the oblique injection of ion.
Published Version
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