Abstract
The surface reaction mechanism of GaAs monolayer growth by molecular layer epitaxy (MLE) was investigated based on the application of quadrupole mass spectroscopy (QMS). The reaction of Ga(CH 3) 3 (TMG) and the reaction of AsH 3 with the adsorbed species induced by the TMG injection on GaAs (001) have been studied by the measurement of the desorbed species by QMS. It is shown that GaCH 3 is an adsorbed species formed by TMG, and the GaCH 3 produces adsorbed Ga and desorbed CH 3 within 15–36 s in the temperature range of monolayer growth. When AsH 3 was injected after the TMG injection, CH 4 and H 2 were detected. This indicates the surface reaction of GaCH 3 and Ga with AsH 3. The surface reaction mechanism will be discussed in detail with QMS, the growth rate measurement and optical reflection intensity measurement in MLE.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
