Abstract
Molecular layer epitaxy (MLE) is a new crystal growth method which is able to produce thin single crystal films of controlled thickness. In this method, adsorption processes and surface reaction processes are utilized by alternate injection of reactant gases. By using TMG and AsH3, GaAs MLE was demonstrated. The dependence of film thickness on the pressure of supplied TMG and on the pressure of supplied AsH3 was studied. By using mass spectroscopy, the adsorption and surface reaction processes were studied. The formation of the Ga complex adsorbate which was produced from TMG, and the surface reaction of the adsorbate and AsH3 were clarified. Moreover, it is supposed that the surface migration species is an adsorbate like Ga(CH3)χ, in MLE.
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