Abstract
The surface reaction mechanism of trimethylgallium (TMG) on GaAs is investigated using quadrupole mass spectroscopy (QMS). The present QMS measurements, which concern only the surface reaction itself, distinguish the surface reaction of TMG on {100}-oriented GaAs as being of two types. By taking into account the QMS results for the {111} Ga and {111} As surfaces, the surface reaction mechanism on GaAs is discussed. These results are applicable to the molecular layer epitaxy (MLE) of GaAs of high purity.
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