Abstract
Shubnikov-de Haas oscillations have been studied for (110) and (111) n-type silicon inversion layers. The measured cyclotron masses m c = (0.38 ± 0.03) m 0 and m c = (0.40 ± 0.03) m 0 for (110) and (111) planes, respectively, are larger than theoretically predicted values. The experimental valley degeneracy factor g v = 2 ± 0.2 for both orientations is also at variance with self consistent calculations. The electronic g-factor depends on the surface carrier concentration and is enhanced over its bulk value. There was no evidence for the occupation of other subbands.
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