Mechanical stress influence on effective masses in Si inversion layers

Abstract

Shubnikov-De Haas oscillations and Hall mobility have been measured under uniaxial stress for (100) and (110) n-type silicon inversion layers. For both cases no population effect into valleys with different masses could be seen. Intravalley mass increases up to 25% have been observed for uniaxial compression of P = 230 N/mm 2. Under stress the occupied degenerate valleys shift relative to each other and cause changes of the SdH amplitudes. For the (110) surface orientation a preexisting uniaxial stress in the surface plane has been detected.