Quantum transport in silicon inversion layers

Abstract

Electric subbands in n-type silicon inversion layers and their dependence on high magnetic fields are briefly reviewed. The information, which may be obtained by analyzing surface quantum oscillations of the Shubnikov-de Haas type is discussed. After a report of new data on effective masses and the g-factor of electrons in inversion layers with (110) and (111) orientation quantum transport data for p-type inversion layers on (110), (111) and (100) planes are reviewed. Recent self-consistent calculations of electric subbands and effective masses for p-type silicon inversion layers have shown, that the band structure is substantially changed by the surface electric field, and that the spin degeneracy is removed. The agreement between the calculated and measured heavy hole masses is satisfying. Finally, the experimental hole mobilities for the three main orientations are correlated with the theoretical calculations.