Abstract
We studied degradation mechanisms of ultraviolet InGaN laser diodes emitting in the UVA range. Short wavelength nitride devices are subjected to much faster degradation, under the same packaging and testing conditions, than their longer wavelength counterparts. Transmission electron microscopy analysis of the degraded laser diodes showed pronounced damage to facets in the area of the active layer (waveguide, quantum wells, and electron blocking layer). Energy-dispersive X-ray spectroscopy showed that the active layers were heavily oxidized, forming a compound close in composition to Ga2O3 with proportional addition of Al in the respective area. The oxidation depth was roughly proportional to the intensity of the optical field. We propose UV-light-induced water splitting on a semiconductor surface as a mechanism of the oxidation and degradation of these devices.
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