Abstract
A deep ultraviolet (DUV) laser diode is a compact and efficient semiconductor device that emits laser light in the deep ultraviolet range. Its unique properties make it suitable for a wide range of applications in fields such as manufacturing, research, and healthcare. In this research we propose two Al-graded Electron Blocking Layer (EBL) and quantum barriers (QBs) to improve the performance of AlGaN-based Deep UV-LDs. The electrical properties and optical properties of three structures containing conventional EBL, composition graded increased EBL, and liner graded increased of EBL and QBs were numerically investigated. It was found that the structure-C with linear graded increased EBL and QBs significantly improved the Optical Confinement Factor (OCF) 21%, gain 1600 cm-1, emission power 0.060 W, raised the carrier concentration in the MQWs region, enhanced the stimulated recombination rate and reduced the carrier leakage, of the laser diode (LDs). But at a 100-mA injection current, the threshold current and voltage were reduced to 43 mA and 5.00 V, valance barrier height 270 meV respectively. In compare to the conventional structure, introducing a graded design for both EBL and Quantum Barriers (QBs) with increased aluminum content significantly enhanced the performance of the laser diode (LD). This improvement is essential for advancing Deep Ultraviolet Laser Diodes (DUV-LD) technology.
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