Investigation of degradation mechanism in GaN-based blue and ultraviolet laser diodes

Abstract

We have studied the aging-induced degradation effect and the related mechanism of blue and ultraviolet (UV) laser diodes (LDs). First of all, the F parameter value, leakage current, and yellow luminescence intensity of LDs all increase after 24 h of the aging process, indicating that one of the reasons for the degradation of UV LDs may be the increase of the non-radiative recombination center in the material. Second, irreversible damage may be found on the front cavity surface of the UV and blue LDs. Due to the large UV photon energy, water molecules in the environment atmosphere are ionized to form OH− ions, which combine with dust in air to form SiO2 sediments and then attach to the front cavity surface. In addition, a large photon energy may cause damage to the anti-reflection film on the front cavity surface and lead to a too-high local temperature near the cavity surface, resulting in molten Ga droplets. Both sediment and the precipitation of molten GaN on the cavity surface will directly affect the function of the front cavity surface and the output power of the LD. In order to improve the reliability of the GaN-based UV LDs, it is necessary to reduce the density of material defects, select more stable coating materials on cavity facets, and improve the sealing property of the device package.