Surface of [formula omitted] observed by atomic force microscopy

Abstract

Atomic force microscopy (AFM) observations of the surface of GaAs grown on Si substrates show spirals starting from dislocations and comples of two planar defects (stacking faults and microtwins). These defects are the sources of hillocks on the GaAs surface. AFM also reveals dislocation-terminated steps and stacking faults with shadows. Spirals and stacking fault shadows characterize the surface morphology of GaAs grown on Si substrates. The defect densities measured by atomic force microscopy and transmission electron microscopy are compared.